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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1383 DESCRIPTION *High DC Current Gain : hFE= 2000(Min.)@ IC= -12A, VCE= -4V *High Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) *Complement to Type 2SD2083 APPLICATIONS *Designed for driver of solenoid, motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE -120 V -120 V -6 V -25 A -40 A -2 A UNIT .cn mi e IC ICM Collector Current-Continuous Collector Current-Peak IB B Base Current- Continuous Collector Power Dissipation @TC=25 Junction Temperature PC 120 W Tj 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff current Emitter Cutoff current DC Current Gain Output Capacitance Current-Gain--Bandwidth Product CONDITIONS IC= -25mA ,IB= 0 B 2SB1383 MIN -120 TYP. MAX UNIT V IC= -12A ,IB= -24mA IC= -12A ,IB= -24mA VCB= -120V, IE= 0 VEB= -6V, IC= 0 -1.8 -2.5 -10 -10 2000 V V A mA Switching Times ton tstg tf Turn-On Time Storage Time Fall Time w w. w .cn mi cse is IC= -12A ; VCE= -4V IE= 0; VCB= -10V; ftest= 1MHz IE= 1A ; VCE= -12V IC = -12A,IB1 = -IB2= -24mA; VCC= -24V, RL= 2 230 50 pF MHz 1.0 3.0 1.0 s s s isc Websitewww.iscsemi.cn |
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